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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ge
Formula:
Ge
Name:
germanium
CAS Registry No:
7440-56-4
Class:
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Author Name(s):
Yang X., Cao R., Terry J., Pianetta P.
Journal:
J. Vac. Sci. Technol. B 10, 2013
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Surface Core-level Shift for the Second Layer of Atoms
Line Designation:
SS1-3d5/2
Surface Core-Level Shift (eV) for the first Layer of Atoms
-0.57
Energy Uncertainty:
0.02
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.25
Lorentzian Width (eV):
0.19

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
62.5
Overall Energy Resolution (eV):
0.25
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The clean Ge(100) surface was prepared by a 1073 K anneal. Peak locations: Voigt function. Branching ratio = 0.67. The intensity ratio of the surface/bulk components was 0.22.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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