NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

Si/AlAs

Name:

silicon/aluminum arsenide

CAS Registry No:

7440-21-3

Class:

element, III-V semiconductor

Citation:

Author Name(s):

Bratina G., Sorba L., Antonini A., Vanzetti L., Franciosi A.

Journal:

J. Vac. Sci. Technol. B 9, 2225

DOI:

Pub Year:

1991

bookAll Records in this Publication

Data Processing:

Photoelectron Line

98.89

0.05

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.69

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

A 150 A silicon film was grown on AlAs(001) at 773 K . Emission angle = 55 degrees.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300