NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

AlAs/GaAs

Name:

aluminum arsenide/gallium arsenide

CAS Registry No:

22831-42-1

Class:

arsenide, III-V semiconductor

Citation:

Author Name(s):

Bratina G., Sorba L., Antonini A., Vanzetti L., Franciosi A.

Journal:

J. Vac. Sci. Technol. B 9, 2225

DOI:

Pub Year:

1991

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Data Processing:

Photoelectron Line

72.86

0.05

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.69

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

A 200 A AlAs film was grown on GaAs(001) at 893 K. RHEED pattern was 3x1. Emission angle = 55 degrees.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300