Tab Page Summary
cadmium selenide/gallium stibnide
chalcogenide, II-VI semiconductor, III-V semiconductor, selenide, stibnide
Yu E.T., Phillips M.C., McCaldin J.O., McGill T.C.
J. Vac. Sci. Technol. B 9, 2233
Overall Energy Resolution (eV):
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
400 A CdSe(cubic)/p-type GaSb with a carrier concentration of ~ 1E17 cm-3. The film was deposited at a substrate temperature of 543 K.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300