Tab Page Summary
    
    
    
        
            cadmium selenide/gallium stibnide
 
        
        
            chalcogenide, II-VI semiconductor, III-V semiconductor, selenide, stibnide
 
        
                Yu E.T., Phillips M.C., McCaldin J.O., McGill T.C.
 
            
                J. Vac. Sci. Technol. B 9, 2233
 
            
            
            
            
            
            
            
            
            
            
            
            
            
            
            
            Overall Energy Resolution (eV):
                Charge Reference:
                Valence band minimum
Energy Scale Evaluation:
                Reliable (reported energy within 300 eV of a reference energy)
Comment:
                400 A CdSe(cubic)/p-type GaSb with a carrier concentration of ~ 1E17 cm-3. The film was deposited at a substrate temperature of 543 K.
Method of Determining Specimen Composition:
                Method of Determining Specimen Crystallinity:
                Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
                300