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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor

Citation:
Author Name(s):
Weijs P.J.W., Fuggle J.C., van der Heide P.A.M.
Journal:
Surf. Sci. 260, 97
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p3/2
Binding Energy (eV)
99.55
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type As-doped Si(100)-(2x1) was cleaned by etching in a 1% HF in water solution, followed by mild Ar+ ion bombardment and annealing by direct curent flow through the sample.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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