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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
SiO2/Si
Si*O2/Si
silicon dioxide/silicon
element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:
Sarapatka T.J.
J. Electron Spectrosc. Relat. Phenom. 58, 233
Pub Year:
1992

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
21 A SiO2/n-type P-doped Si(110) wafer with a carrier concentration of ~5E17 cm-3. The substrate was cleaned by Ar+ ion bombardment followed or not annealing (T = 1000 +- 50 K) by the radiation.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
80

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