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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
SiO2/Si
XPS Formula:
Si*O2/Si
Name:
silicon dioxide/silicon
CAS Registry No:
7631-86-9
Class:
element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Sarapatka T.J.
Journal:
J. Electron Spectrosc. Relat. Phenom. 58, 233
DOI:
Pub Year:
1992

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
103.22
Energy Uncertainty:
0.05
Background Subtraction Method:
Linear
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
19 A thick SiO2 formed on the 5% HF etched n-type P-doped Si(110) wafer with a carrier concentration of ~5E17 cm-3 by boiling in redistilled H2O for 1 min. The substrate was cleaned by Ar+ ion bombardment followed or not annealing (T = 1000 +- 50 K) by t

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
80
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