NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Si

Si

silicon

CAS Registry No:

7440-21-3

element, II-VI semiconductor, IV semiconductor

Citation:

Author Name(s):

Mesarwi A., Ignatiev A.

J. Vac. Sci. Technol. A 9, 2264

Pub Year:

1991

book All Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

2p

Binding Energy (eV)

99.30

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

p-type B-doped Si(100) with a resistivity of 0.5 ohm cm was cleaned by Ar+ ion bombardment (Ep = 2 keV, j = 15 microamperes cm-2, time = 30 min) and subsequently annealed (T = 1123 K, time = 30 min).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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