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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Al
Formula:
MgAl2.2O4.7/SiO2
Name:
magnesium aluminum oxide/silicon dioxide(MgAl2.2O4.7/SiO2)
CAS Registry No:
Class:
double oxide, IV-VI semiconductor, oxide

Citation:
Author Name(s):
Mattogno G., Righini G., Montesperelli G., Traversa E.
Journal:
Appl. Surf. Sci. 70, 363
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
74.50
Energy Uncertainty:
0.2
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
80+-4.0 A MgAl2.7O5.3/SiO2. The thin film was prepared by RF sputtering on n-type Si(100) wafer with a 200 nm thick layer of thermally grown SiO2.

Specimen:
Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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