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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
SiOx/Si
Name:
silicon oxides/silicon
CAS Registry No:
11126-22-0
Class:
anhydride, element, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Saliman S., Delfino M.
Journal:
J. Appl. Phys. 70, 3970
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-2p
Double Separation (eV)
0.60
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
Native oxide of B-doped Si(100) with a resistivity of 1.5 - 5 ohm cm. The thickness determined by ellipsometry was ~ 2nm. Emission angle = 55 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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