NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

silicon

7440-21-3

element, II-VI semiconductor, IV semiconductor

Citation:

Author Name(s):

Morgan S.J., Williams R.H., Mooney J.M.

Journal:

Appl. Surf. Sci. 56, 493

DOI:

Pub Year:

1992

bookAll Records in this Publication

Data Processing:

Photoelectron Line

99.22

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.7

Calibration:

Pt4f7 = 71.12

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

p-type Si(100)-(2x1) with a resistivity of 3 ohm cm was cleaned by annealing (T =1023 K, time = 20 min). Peak locations: Voigt function.

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300