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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ga
Formula:
Ti/GaAs
XPS Formula:
Ti/Ga*As
Name:
titanium/gallium arsenide
CAS Registry No:
1303-00-0
Class:
arsenide, IV-VI semiconductor

Citation:
Author Name(s):
Xu F., Lin Z., Hill D.M., Weaver J.H.
Journal:
Phys. Rev. B 36, 6624
DOI:
Pub Year:
1987

Data Processing:
Data Type:
Interface Core-Level Shift
Line Designation:
INT-3d
Interface Core-Level Shift
-0.67
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
15 A Ti/GaAs (100). GaAs(100) wafer was Si doped at ~1E18 cm-3. Ti was evaporated from resistively heated W boat and annealed at 633 K. The ammount of metal deposited was monitored with a quartz- crystal oscillator.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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