NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

GaAsOx/GaAs

As(III) species

gallium arsenide oxides/gallium arsenide

CAS Registry No:

Class:

arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Lu Z., Schmidt M.T., Osgood R.M., Jr, Holber W.H., Podlesnik D.V.

Journal:

J. Vac. Sci. Technol. A 9, 1040

DOI:

Pub Year:

1991

bookAll Records in this Publication

Data Processing:

Chemical Shift

CS-2p_3/2

3.10

0.2

Background Subtraction Method:

other

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

5 A GaAsOx/n-type GaAs(100). The oxide was formed by using 192-nm excimer laser. The energy is referenced to the bulk state of the As2p3/2 line.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300