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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
In0.75Ga0.25As/InP
In0.75Ga0.25As bulk state
gallium indium arsenide ss/indium phosphide(In0.75Ga0.25As/InP)
arsenide, III-V semiconductor, solid solution

Citation:
Erickson J.W., Theis W.M., Cole T., Green A.K., Rehn V.
Surf. Sci. 274, 363
Pub Year:
1992

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
100
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
80 A InGaAs/InP(100)-(4x2). Coherently strained film was grown at 850 - 860 K. The sample was decapped by heating to about 650 K. The Gaussian width is an intrinsic one. The spectra were recorded at normal emission. Branching ratio = 0.67.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300

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