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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Sm/GaAs
samarium/gallium arsenide
arsenide, III-V semiconductor, IV-VI semiconductor

Citation:
Komeda T., Anderson S.G., Seo J.M., Schabel M.C., Weaver J.H.
J. Vac. Sci. Technol. A 9, 1964
Pub Year:
1991

Data Processing:
Interface Core-Level Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
90
Overall Energy Resolution (eV):
0.25
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
1.17, 1.66, 2.66, and 3.66 ML Sm were deposited onto n-type (p-type) Si- (Zn-) doped GaAs(110) with a carrier concentration of 2E18 cm-3 (1E17 cm -3 at 20 K. Peak locations: Doniach - Sunjic & Gaussian.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
20

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