Reliable (reported energy within 300 eV of a reference energy)
Comment:
Mo3Si(110)-(1x1) and Mo3Si(100)-(1x1). The samples were cleaned by Ar+ ion bombardment (Ep = 600 eV, Ip = 1 microampere, time = 5 min) followed by repeated annealings (T = ~1173 K (Mo3Si(100)) and T = ~973 K (Mo3Si(110)). Branching ratio = 0.50. The spectra were recorded at normal emission.