NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ge

Ge

adatoms and atoms below them in c(₂x₈) reconstruction

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:

Author Name(s):

Le Lay G., Johnson R.L., Seemann R., Grey F., Feidenhans'l R., and Nielsen M.

Surf. Sci. 287, 539

Pub Year:

1993

book All Records in this Publication

Data Processing:

Surface Core-level Shift

Line Designation:

SS-3d_5/2

Surface Core-Level Shift (eV)

-0.27

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

50

Overall Energy Resolution (eV):

0.35

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Undoped Ge(111) was cleaned by Ar+ ion bombardment and annealed until a sharp c(2x8) LEED pattern emerged. Singularity index = 0.1. Branching ratio = 0.67.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

XPS–scanning Tunneling Microscopy, Low-energy Electron Diffraction

Specimen Temperature (K):

300

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