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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
Mo3Si
XPS Formula:
surface component
Name:
trimolybdenum silicide
CAS Registry No:
Class:
silicide

Citation:
Author Name(s):
Johansson L.I., Hakansson K.L., Wincott P.L., Karlsson U.O., Christensen A.N.
Journal:
Phys. Rev. B 43, 12355
DOI:
Pub Year:
1991

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-2p
Double Separation (eV)
0.61
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.25
Lorentzian Width (eV):
0.10

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
117
Overall Energy Resolution (eV):
0.2
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Mo3Si(110)-(1x1) and Mo3Si(100)-(1x1). The samples were cleaned by Ar+ ion bombardment (Ep = 600 eV, Ip = 1 microampere, time = 5 min) followed by repeated annealings (T = ~1173 K (Mo3Si(100)) and T = ~973 K (Mo3Si(110)). Branching ratio = 0.50. Emission angle = 0 degree.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Auger Electron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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