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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
GaAs0.15O2.2
As(III) state
gallium arsenic oxide (GaAs0.15O2.2)
arsenic, non-stoichiometric oxide, oxide

Citation:
Hollinger G., Skheyta - Kabbani R., Gendry M.
Phys. Rev. B 49, 11159
Pub Year:
1994

Data Processing:
Chemical Shift
other type of curve fit

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au,Ag = 84.00,368.27
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
The oxide was formed using a constant flow of 101325 Pa of O2 at 623 K for 2 h. The intensity ratio of As(V)/As(III) components was 0.62. The interfacial As layer thickness was 2.9 A. The thickness was measured by ellipsometry. The chemical shift is relative to the substrate atoms.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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