NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ge

Ge

second^-layer atoms attached to adatoms corresponding to ₃/₄ ML

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:

Author Name(s):

Gothelid M., Grehk T.M., Hammar M., Karlsson U.O., Flodstrom S.A.

Phys. Rev. B 48, 2012

Pub Year:

1993

book All Records in this Publication

Data Processing:

Surface Core-level Shift

Line Designation:

SS-3d_5/2

Surface Core-Level Shift (eV)

-0.23

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.59

Lorentzian Width (eV):

0.30

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

70, 90,110

Overall Energy Resolution (eV):

0.09

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Ga-doped Ge(111)-c(2x8) with a resistivity of 0.004 - 0.1 ohm cm. LEED pattern was achieved after repeated cycles of Ar+ ion sputtering and annealing (T = 923K, time = 10 min). The Gaussian FWHM was 0.65 eV at 300 K.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

77, 300

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