NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Element:

Formula:

GaAs

Name:

gallium(III) arsenide

CAS Registry No:

1303-00-0

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Yu E.T., Chow D.H., McGill T.C.

Journal:

J. Vac. Sci. Technol. B 7, 391

DOI:

Pub Year:

1989

bookAll Records in this Publication

Data Processing:

Photoelectron Line

18.73

0.05

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Si-doped (n+)-type GaAs(100) with a carrier concentration of 1E16 cm-3.. The sample was grown at 873 K.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300