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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
GaAs/Y
gallium arsenide/yttrium
arsenide, III-V semiconductor

Citation:
Mesarwi A., Ignatiev A.
Surf. Sci. 282, 371
Pub Year:
1993

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au4f7 = 84.00
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
0.8 ML Y/GaAs(100). n-type Si-doped GaAs with a carrier concentration of 1E16 cm-3. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV, j = 10 microamperes/cm2, time = 30 min) and subsequently annealed (T = 723 K, time = 15 min) by indirect ele

Specimen:
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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