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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ge
Formula:
Ge
Name:
germanium
CAS Registry No:
7440-56-4
Class:
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Author Name(s):
Carlisle J.A., Miller T., Chiang T.-C.
Journal:
Phys. Rev. B 47, 3790
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Surface Core-level Shift
Line Designation:
SS-3d5/2
Surface Core-Level Shift (eV)
0.77
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.310
Lorentzian Width (eV):
0.130

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
90
Overall Energy Resolution (eV):
0.17
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Ge(111)-c(2x8). The sample was cleaned by several cycles of Ar+ ion bombardment (Ep = 500 eV) while annealing at 773 K followed by 15 min anneals at 1073 K. Peak locations: Voigt function. Branching ratio = 0.620. The intensity ratio of the surface/bulk components was 0.225.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
X-ray Diffraction, High-energy Electron Diffraction
Specimen Temperature (K):
300
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