NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

SiO₂/Si

Si*O₂/Si

silicon dioxide/silicon

CAS Registry No:

7631-86-9

Class:

element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Behner H., Wecker J., Matthee T., Samwer K.

Journal:

Surf. Interface Anal. 18, 685

DOI:

Pub Year:

1992

bookAll Records in this Publication

Data Processing:

Photoelectron Line

154.40

Background Subtraction Method:

Linear

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.9

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

17 A SiO2/p-type Si(100) with a resistivity of 1ohm cm. The thickness was measured by XPS.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300