Reliable, with one-point correction of energy scale
Comment:
10 A of yttria-stabilized zirconia were deposited onto p-type Si(100)-(2x1) with a resistivity of 1ohm cm at 1003 K and at 3E-6, 1E-7 and 5E-7 mbar of O2. The substrate was cleaned by sputtering with a fast ion beam. The thickness was measured using a quartz-crystal thickness monitor.