NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

germanium

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:

Author Name(s):

Cao R., Yang X, Terry J., Pianetta P.

Journal:

Phys. Rev. B 45, 13749

DOI:

Pub Year:

1992

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-3d

Surface Core-Level Shift (eV) for the first Layer of Atoms

-0.54

Energy Uncertainty:

0.02

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.24

Lorentzian Width (eV):

0.12

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

62.5

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type Ge(100)-(2x1). The sample was cleaned by thermal annealing at ~1073 K. Branching ratio = 0.67. Peak locations: Voigt function.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300