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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
aluminum stibnide
25152-52-7
III-V semiconductor, stibnide

Citation:
Yu E.T., Phillips M.C., Chow D.H., Collins D.A., Wang M.W., McCaldin J.O., et al.
Phys. Rev. B 46, 13379
Pub Year:
1992

Data Processing:
Photoelectron Line
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
5000 A AlSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. The film was deposited at the substrate temperature of 803 K. Peak locations: Voigt function

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300

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