NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

GaSb

gallium stibnide

12064-03-8

II-VI semiconductor, III-V semiconductor, stibnide

Citation:

Author Name(s):

Yu E.T., Phillips M.C., Chow D.H., Collins D.A., Wang M.W., McCaldin J.O., et al.

Journal:

Phys. Rev. B 46, 13379

DOI:

Pub Year:

1992

bookAll Records in this Publication

Data Processing:

Photoelectron Line

18.86

0.04

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

5000 A GaSb/p-type GaSb(100) with a carrier concentration of 1E17 cm-3. Peak locations: Voigt function.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300