NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Tab Page Summary
General:
Si
MoSi2
molybdenum disilicide
12136-78-6
IV-VI semiconductor, silicide
Citation:
Johansson H.I.P., Hakansson K.L., Johansson L.I., Christensen A.N.
Phys. Rev. B 49, 7484
Pub Year:
1994
Data Processing:
Doublet Separation for Photoelectron Lines
DS-2p
mixed Gaussian/Lorentzian
Measurement:
Anode Material:
other source
X-ray Energy:
108 - 170
Overall Energy Resolution (eV):
0.23
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
MoSi2(110)-(1x1) and MoSi2(001)-(1x1). The single-crystals were grown in a floating-zone in a He atmosphere (pressure = 1 MPa). The Gaussian FWHM's were 0.29 eV and 0.31 eV for the excitation energies of 110 eV and 140 eV, respectively. Branching ratio = 0.5. Asymmetry parameter = 0.03.
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction, X-ray Diffraction
Specimen Temperature (K):
300