NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 10

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

MoSi₂

DS-2p

0.61

MoSi₂

2p_3/2

99.40

MoSi₂

SS-4p

0.00

MoSi₂

SS-2p_3/2

0.44

MoSi₂

SS1-2p_3/2

-0.68

MoSi₂

SS1-2p_3/2

-0.72

MoSi₂

SS2-2p_3/2

-0.26

MoSi₂

SS2-2p_3/2

-0.26

MoSi₂

SS2-2p_3/2

-0.29

MoSi₂

SS2-2p_3/2

-0.29

Data Processing:

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-2p_3/2

Surface Core-Level Shift (eV) for the first Layer of Atoms

-0.68

Energy Uncertainty:

0.05

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.40

Lorentzian Width (eV):

0.07

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

110, 140

Overall Energy Resolution (eV):

0.23

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

MoSi2(001)-(1x1). The single-crystal was grown in a floating-zone growth mode in a He atmosphere with a pressure of 1 MPa. The crystal was cleaned by ion bombardment (time = 10 min) and subsequently annealed (T = 1373 K). Branching ratio = 0.5. Asymmetry parameter = 0.03.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction, X-ray Diffraction

Specimen Temperature (K):

300