NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Si

MoSi₂

molybdenum disilicide

CAS Registry No:

12136-78-6

IV-VI semiconductor, silicide

Citation:

Author Name(s):

Johansson H.I.P., Hakansson K.L., Johansson L.I., Christensen A.N.

Phys. Rev. B 49, 7484

Pub Year:

1994

bookAll Records in this Publication

Data Processing:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-2p_3/2

Surface Core-Level Shift (eV) for the first Layer of Atoms

-0.72

Energy Uncertainty:

0.06

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.40

Lorentzian Width (eV):

0.07

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

110, 140

Overall Energy Resolution (eV):

0.23

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

MoSi2(110)-(1x1). The single-crystal was grown in a floating-zone growth mode in a He atmosphere with a pressure of 1 MPa. The crystal was cleaned by ion bombardment (time = 10 min) and subsequently annealed (T = 1173 K). Branching ratio = 0.5. Asymmetry parameter = 0.03.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction, X-ray Diffraction

Specimen Temperature (K):

300

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