NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

GaAsOx/GaAs

Ga₂O₃

gallium arsenide oxides/gallium arsenide

CAS Registry No:

Class:

arsenic, arsenide, III-V semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Debiemme-Chouvy C., Ballutaud D., Pesant J.C., Etcheberry A.

Journal:

Appl. Phys. Lett. 62, 2254

DOI:

Pub Year:

1993

bookAll Records in this Publication

Data Processing:

Photoelectron Line

21.29

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

1.75

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

n-GaAs with a carrier concentration of 2E18 cm-3.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300