NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

SiO₂/Si

Si*O₂/Si

silicon dioxide/silicon

CAS Registry No:

7631-86-9

Class:

element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Hasegawa M., Ninomiya K.

Journal:

Jpn. J. Appl. Phys. Part 1 32, 4799

DOI:

Pub Year:

1993

bookAll Records in this Publication

Data Processing:

Chemical Shift

CS-2p

4.20

Background Subtraction Method:

other

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

114, 149

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

6 A SiO2/Si. X-ray excitation energy = 114, 116.5, 119, and 149 eV. The thickness was measured by ellipsometry.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300