NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ga

GaS

gallium sulfide

CAS Registry No:

12024-10-1

chalcogenide, II-VI semiconductor, sulfide

Citation:

Author Name(s):

MacInnes A.N., Power M.B., Barron A.R., Jenkins P.P., Hepp A.F.

Appl. Phys. Lett. 62, 711

Pub Year:

1993

bookAll Records in this Publication

Data Processing:

Photoelectron Line

Line Designation:

3p_1/2

Binding Energy (eV)

108.70

Energy Uncertainty:

0.2

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

~5000 A GaS/n-type (undoped) GaAs and ~5000 A GaS/p-type (with a carrier concentration of 1E16 cm-3). The substrates were held at 663 K during deposition. Cubic phase.

Specimen:

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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