Tab Page Summary
arsenide, II-VI semiconductor, III-V semiconductor
Hirakawa K., Hashimoto Y., Ikoma T.
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Total Records: 2
Overall Energy Resolution (eV):
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
3000 A - thick Si-doped n-type GaAs.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300