Reliable (reported energy within 300 eV of a reference energy)
Comment:
90 A CdS were deposited at 298 K onto p-type CuInSe2(112) cleaned by Ar+ ion bombardment (Ep = 500 eV, angle of incidence = 30 degrees) and annealing (T = 773 K, time = ~2 min). The thickness was measured using a quartz-crystal thickness monitor. The spectra were recorded at normal emission.