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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
SiO2/Si
Si(0) state
silicon dioxide/silicon
element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:
Yu X., Hantsche H.
Surf. Interface Anal. 20, 555
Pub Year:
1993

Data Processing:
Photoelectron Line
other type of curve fit

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
11 A SiO2/n-type Si(111). The thickness was measured by an XPS depth profile measurment. An electron flood gun (Ep = 2 eV) was used for charge compensation. Emission angle = 55 degrees.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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