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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
SiO2/Si
XPS Formula:
oxide state
Name:
silicon dioxide/silicon
CAS Registry No:
7631-86-9
Class:
element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Yu X., Hantsche H.
Journal:
Surf. Interface Anal. 20, 555
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
103.20
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
other type of curve fit
Full Width at Half-maximum Intensity (eV):
1.7
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
66 A SiO2/n-type Si(111). The thickness was measured by an XPS depth profile measurment. An electron flood gun (Ep = 2 eV) was used for charge compensation. Emission angle = 55 degrees.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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