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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Ge
Formula:
Ge
Name:
germanium
CAS Registry No:
7440-56-4
Class:
element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:
Author Name(s):
Le Lay G., Johnson R.L., Seemann R., Grey F., Feidenhans'l R., and Nielsen M.
Journal:
Surf. Sci. 287, 539
DOI:
Pub Year:
1993

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-3d
Double Separation (eV)
0.59
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.34
Lorentzian Width (eV):
0.15

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
other source
X-ray Energy:
50
Overall Energy Resolution (eV):
0.2
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Undoped Ge(111) was cleaned by Ar+ ion bombardment and annealed until a sharp c(2x8) LEED pattern emerged. Singularity index = 0.1. Branching ratio = 0.67.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
XPS–scanning Tunneling Microscopy, Low-energy Electron Diffraction
Specimen Temperature (K):
300
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