Tab Page Summary
titanium nitride/silicon dioxide
Chourasia A.R., Chopra D.R.
Thin Solid Films 266, 298
Overall Energy Resolution (eV):
0.7
Calibration:
Ag3d5 = 368.27
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
~ 1000 A TiN/~ 1000 A SiO2 thermally grown on p-type Si. The substrate temperature was maintained at 873 K. FAT mode.
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300