NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

O₂/Si

oxygen/silicon

7782-44-7

element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Borman V.D., Gusev E.P., Lebedinski Y.Y., Troyan V.I.

Journal:

Phys. Rev. B 49, 5415

DOI:

Pub Year:

1994

bookAll Records in this Publication

Data Processing:

Photoelectron Line

532.00

0.1

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

Si(100) was exposed to 600 L O2 at 1020 K. The substrate was cleaned by cycles of Ar+ ion bombardment (Ep = 3.5 keV) and annealing (T = 1100 K).

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300