NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

surface defects

silicon

7440-21-3

element, II-VI semiconductor, IV semiconductor

Citation:

Author Name(s):

Dufour G., Rochet F., Roulet H., Sirotti F.

Journal:

Surf. Sci. 304, 33

DOI:

Pub Year:

1994

book All Records in this Publication

Data Processing:

Data Type:

Surface Core-level Shift

Line Designation:

SS-2p

Surface Core-Level Shift (eV)

0.75

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.60

Lorentzian Width (eV):

0.1

Measurement:

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

135

Overall Energy Resolution (eV):

0.3

Calibration:

FL = Fermi level

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Si(001)-(2x1). The sample was cleaned by heating at 1323 K for 15 s. The relative intensity was 0.031. Branching ratio = 0.5.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300