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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
O2/Si
XPS Formula:
oxide state
Name:
silicon oxides (O2/Si)
CAS Registry No:
11126-22-0
Class:
IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Arezzo F., Severini E., Zacchetti N.
Journal:
Surf. Interface Anal. 22, 218
DOI:
Pub Year:
1994

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV)
104.00
Energy Uncertainty:
0.2
Background Subtraction Method:
other
Peak Location Method:
Gaussian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.98
Calibration:
Au,Ag,Cu = 84.00,368.27,932.67
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with three-point correction of energy scale
Comment:
FAT mode. The relative intensity was 0.22.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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