NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

As

O₂/GaAs

oxygen/gallium arsenide

CAS Registry No:

arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Kaul P., Schutze A., Kohl D., Brauers A., Weyers M.

J. Cryst. Growth 123, 411

Pub Year:

1992

book All Records in this Publication

Data Processing:

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV)

3.10

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

4.5E8 L O2/GaAs(100). Adsorption of O2 was performed at 200 mbar for 5 min at 470, 570 and 670 K and at 200 mbar for 30 min at 570 K. Ratios of oxidized versus unoxidized peak areas were 0.45, 0.95, 1.53 and 1.67, respectively.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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