Tab Page Summary
alkaline earth, chalcogenide, II-VI semiconductor, selenide
Wang M.W., Swenberg J.F., Miles R.J., Phillips M.C., Yu E.T., McCaldin J.O. et al
J. Cryst. Growth 138, 508
10.1016/0022-0248(94)90859-1
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mixed Gaussian/Lorentzian
Overall Energy Resolution (eV):
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The film thickness is more than 3000 A. The film was grown at a substrate temperature of 543 K. Cubic zinc blende structure. Peak locations: Voigt function.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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