Tab Page Summary
element, II-VI semiconductor, IV semiconductor
Johansson L.S.O., Grehk T.M., Gray S.M., Johansson M., Flodstrom A.S.
Nucl. Instruments Methods in Phys. Res. Sec. B 97, 364
10.1016/0168-583X(94)00364-5
Doublet Separation for Photoelectron Lines
mixed Gaussian/Lorentzian
Anode Material:
other source
Overall Energy Resolution (eV):
0.1
Charge Reference:
Element
Comment:
n-type P-doped Si(100)-(2x1) with a resistivity of 0.67 - 1.33 ohm cm was prepared by resistive heating to 1123 - 1173 K followed by a slow cool down process. Branching ratio = 0.5.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
Go Back