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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
Details Summary:
Summary Page
Tab Page Summary
General:
Element:
Ga
Formula:
GaN
Name:
gallium nitride
CAS Registry No:
25617-97-4
Class:
II-VI semiconductor, III-V semiconductor, nitride
Citation:
Author Name(s):
Martin G., Strite S., Botchkarev A., Agarwal A., Rockett A., Morkoc H., et al.
Journal:
Appl. Phys. Lett. 65, 610
DOI:
10.1063/1.112247
Pub Year:
1994
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All Records in this Publication
Data Processing:
Data Type:
Photoelectron Line
Line Designation:
3p
1/2
Binding Energy (eV)
106.30
Energy Uncertainty:
0.1
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al/Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.3
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type GaN. The samples investigated were grown on (0001) 6H-SiC and (0001) saphire substrates in an electron cyclotron resonance, and are of wurtzite crystal structure.
Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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