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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Al
Formula:
AlN
Name:
aluminum nitride
CAS Registry No:
24304-00-5
Class:
III-V semiconductor, nitride

Citation:
Author Name(s):
Martin G., Strite S., Botchkarev A., Agarwal A., Rockett A., Morkoc H., et al.
Journal:
Appl. Phys. Lett. 65, 610
DOI:
Pub Year:
1994

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2s
Binding Energy (eV)
115.60
Energy Uncertainty:
0.2
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
Al/Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.3
Calibration:
Charge Reference:
Valence band minimum
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The samples investigated were grown on (0001) 6H-SiC and (0001) saphire substrates in an electron cyclotron resonance, and are of wurtzite crystal structure.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300
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