Reliable, with one-point correction of energy scale
Comment:
1E4 L O2 were adsorbed onto B/TaB1.94/Ta(110) at 1000 K. The boron thin film was grown at 650 -700 K. The B2H6/Ar mixture was used. The film was annealed to 300 K. TaB2 was prepared by thermal decomposition of B2H6. FAT mode. The substrate was cleaned by Ar+ ion bombardment and annealing to 2700 K. FAT mode.