NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

O₂/Si

oxide state

oxygen/silicon

7782-44-7

element, IV semiconductor, non-stoichiometric oxide, oxide

Citation:

Author Name(s):

Craciun V., Reader A.H., Vandenhoudt D.E.W., Best S.P., Hutton R.S., Andrei A., et al.

Journal:

Thin Solid Films 255, 290

DOI:

Pub Year:

1995

book All Records in this Publication

Data Processing:

Photoelectron Line

532.90

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

p-type Si(100) substrate with a resistivity of 1000 Ohm cm, was heated to 823 K and irradiated by a low pressure Hg lamp in the presence of 1 bar O2.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300